In this paper we report on recrystallized amorphous hydrogenated germanium (a-Ge:H) thin film on polyimide to fabricate flexible near infrared (NIR) light sensitive resistors that can be used in flexible electronics. In this work we investigate the effect of pulsed excimer laser annealing of a-Ge:H thin films for fabrication of low temperature photo-detectors operating in the NIR.

Flexible near infrared photoresistors based on recrystallized amorphous germanium thin films

Maiolo L;Minotti A;Pecora A;
2017

Abstract

In this paper we report on recrystallized amorphous hydrogenated germanium (a-Ge:H) thin film on polyimide to fabricate flexible near infrared (NIR) light sensitive resistors that can be used in flexible electronics. In this work we investigate the effect of pulsed excimer laser annealing of a-Ge:H thin films for fabrication of low temperature photo-detectors operating in the NIR.
2017
Inglese
15th IEEE Sensors Conference, SENSORS 2016
http://www.scopus.com/record/display.url?eid=2-s2.0-85010986781&origin=inward
Sì, ma tipo non specificato
30/10/2016 02/11/2016
Convention Center at the Caribe Royale HotelOrlando; United States
Germanium thin film
Hydrogenated germanium
Infrared detection
Photo-resistor
Pulsed-laser annealing
sensors
9
none
Ferrone, A; Maiolo, L; Minotti, A; Pecora, A; Iacovo, D; Colace, L; Grayli, Sv; Leach, Gw; Bahreyni, B
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/355999
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