Colloidal quantum dots have recently attracted lot of interest in the fabrication of optoelectronic devices due to their unique optical properties and their simple and low cost fabrication. PbS nanocrystals emerged as the most advanced colloidal material for near infrared photodetectors. In this work we report on the fabrication and characterization of PbS colloidal quantum dot photoconductors. In order to make devices suitable for the monolithic integration with silicon electronics, we propose a simple and low cost process for the fabrication of photodetectors and investigate their operation at very low voltage bias. Our photoconductors feature high responsivity and detectivity at 1.3 mu m and 1 V bias with maximum values of 30 A/W and 2.10(10) cmHz(1/2)W(-1), respectively. Detectivity close to 10(11) cmHz(1/2)W(-1) has been obtained resorting to bridge sensor readout.
PbS Colloidal Quantum Dot Photodetectors operating in the near infrared
Scopa L;Foglia S
2016
Abstract
Colloidal quantum dots have recently attracted lot of interest in the fabrication of optoelectronic devices due to their unique optical properties and their simple and low cost fabrication. PbS nanocrystals emerged as the most advanced colloidal material for near infrared photodetectors. In this work we report on the fabrication and characterization of PbS colloidal quantum dot photoconductors. In order to make devices suitable for the monolithic integration with silicon electronics, we propose a simple and low cost process for the fabrication of photodetectors and investigate their operation at very low voltage bias. Our photoconductors feature high responsivity and detectivity at 1.3 mu m and 1 V bias with maximum values of 30 A/W and 2.10(10) cmHz(1/2)W(-1), respectively. Detectivity close to 10(11) cmHz(1/2)W(-1) has been obtained resorting to bridge sensor readout.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
