We present the electrical characterization of mono and bilayer MoS 2 back-gate field-effect transistors with ohmic or Schottky contacts. We investigate features such as persistent photoconductivity, hysteresis and field emission
Persistent photoconductivity, hysteresis and field emission in MoS2 back-gate field-effect transistors
Giubileo F;Luongo G;Urban F;
2019
Abstract
We present the electrical characterization of mono and bilayer MoS 2 back-gate field-effect transistors with ohmic or Schottky contacts. We investigate features such as persistent photoconductivity, hysteresis and field emissionFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
