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We present the electrical characterization of mono and bilayer MoS 2 back-gate field-effect transistors with ohmic or Schottky contacts. We investigate features such as persistent photoconductivity, hysteresis and field emission

Persistent photoconductivity, hysteresis and field emission in MoS2 back-gate field-effect transistors

Giubileo F;Luongo G;Urban F;
2019

Abstract

We present the electrical characterization of mono and bilayer MoS 2 back-gate field-effect transistors with ohmic or Schottky contacts. We investigate features such as persistent photoconductivity, hysteresis and field emission
2019
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Inglese
13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018
9781538610169
http://www.scopus.com/inward/record.url?eid=2-s2.0-85061795888&partnerID=q2rCbXpz
Sì, ma tipo non specificato
14-17/10/2018
Portland; United States
field effect transistors
field emission
hysteresis
MoS 2
photoconductivity
Schottky barrier
2-s2.0-85061795888
3
none
Di Bartolomeo A.; Iemmo L.; Giubileo F.; Luongo G.; Urban F.; Grillo A.
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/363406
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