We show the fabrication and the electro-optical characterization at 2.9 K of a photon number resolving detector modified to obtain a pulse position resolution. The detector exploits the spatial multiplexing of four SNSPDs connected in series: each pixel has in parallel an on-chip resistor of different value Ri. To improve the signal to noise ratio (SNR) of the pulse-position-resolving detector (PPRD), two parallel wires arranged in the so-called SNAP configuration has been used in each pixel.

A Photon-Number-Resolving Detector with Pulse-Position Readout

Gaggero A;Chiarello F;Graziosi M;Mattioli F;Torrioli G;Leoni R
2018

Abstract

We show the fabrication and the electro-optical characterization at 2.9 K of a photon number resolving detector modified to obtain a pulse position resolution. The detector exploits the spatial multiplexing of four SNSPDs connected in series: each pixel has in parallel an on-chip resistor of different value Ri. To improve the signal to noise ratio (SNR) of the pulse-position-resolving detector (PPRD), two parallel wires arranged in the so-called SNAP configuration has been used in each pixel.
2018
Inglese
16th International Superconductive Electronics Conference, ISEC 2017
2018-January
1
3
9781509058686
http://www.scopus.com/record/display.url?eid=2-s2.0-85046971555&origin=inward
12-6/06/2017
Napoli, Italia
detectors
NbN nanowires
single photon
SNSPD
6
none
Gaggero, A.; Chiarello, F.; Elviretti, M.; Graziosi, M.; Mattioli, F.; Torrioli, G.; Leoni, R.
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/364531
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