We show the fabrication and the electro-optical characterization at 2.9 K of a photon number resolving detector modified to obtain a pulse position resolution. The detector exploits the spatial multiplexing of four SNSPDs connected in series: each pixel has in parallel an on-chip resistor of different value Ri. To improve the signal to noise ratio (SNR) of the pulse-position-resolving detector (PPRD), two parallel wires arranged in the so-called SNAP configuration has been used in each pixel.

A Photon-Number-Resolving Detector with Pulse-position Readout

Gaggero A;Chiarello F;Mattioli F;Torrioli G;Leoni R
2017

Abstract

We show the fabrication and the electro-optical characterization at 2.9 K of a photon number resolving detector modified to obtain a pulse position resolution. The detector exploits the spatial multiplexing of four SNSPDs connected in series: each pixel has in parallel an on-chip resistor of different value Ri. To improve the signal to noise ratio (SNR) of the pulse-position-resolving detector (PPRD), two parallel wires arranged in the so-called SNAP configuration has been used in each pixel.
2017
Inglese
2017 16TH INTERNATIONAL SUPERCONDUCTIVE ELECTRONICS CONFERENCE (ISEC)
3
12-16/06/2017
SNSPD
NbN nanowires
single photon
detectors
7
none
Gaggero, A; Chiarello, F; Elviretti, M E; Graziosi, M; Mattioli, F; Torrioli, G; Leoni, R
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/365923
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 0
social impact