Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/ silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275 nm) to infrared (1150 nm). Applying a gate voltage V-G, the rise time decreases down to about 1 ns, making our devices comparable to most commercial PDs.
2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector
Catone D;Di Mario L;
2019-01-01
Abstract
Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/ silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275 nm) to infrared (1150 nm). Applying a gate voltage V-G, the rise time decreases down to about 1 ns, making our devices comparable to most commercial PDs.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
