In this paper we present the development of an electro optical «Bragg» modulator for telecommunication, in both design and fabrication. The device consists from a regular single mode silicon waveguide (WG) in which an effective Bragg reflector is «turned on» within the WG by means of external bias, due to the plasma dispersion effect, in which the (complexed) refractive index is affected by carrier concentration within the Silicon. Three different strategies are presented for both design and fabrication.

Silicon single mode waveguide modulator based upon switchable Bragg reflector

Businaro Luca;Gerardino Annamaria;
2018

Abstract

In this paper we present the development of an electro optical «Bragg» modulator for telecommunication, in both design and fabrication. The device consists from a regular single mode silicon waveguide (WG) in which an effective Bragg reflector is «turned on» within the WG by means of external bias, due to the plasma dispersion effect, in which the (complexed) refractive index is affected by carrier concentration within the Silicon. Three different strategies are presented for both design and fabrication.
2018
Inglese
SPIE OPTO,2018
10537
9781510615595
http://www.scopus.com/record/display.url?eid=2-s2.0-85047427853&origin=inward
Sì, ma tipo non specificato
27/01/2018 - 01/02/2018
San Francisco, California, United States
Bragg reflector
Optical modulators
silicon waveguide
6
none
Azogui, Jonathan; Ramon, Yonathan; Businaro, Luca; Ciasca, Gabriele; Gerardino, Annamaria; Zalevsky, Zeev
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/367264
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