Sb Te is a chalcogenide compound of great interest, due to its applications in the fields of phase change, thermoelectric devices, as well as of topological insulators. In this work, the MOCVD deposition of both Sb Te thin films and nanowires was performed by using the same set of precursors and exploiting the low temperature deposition for thin films and VLS mechanisms for nanowires. A special attention was dedicated to the analysis of the thermal properties, performed by scanning thermal microscopy and modulated photothermal radiometry techniques. The thermal conductivity of the thin layers was compared to that of a nanowire, finding that the values are comparable to those reported for bulk Sb Te .

MOCVD growth and thermal analysis of Sb 2 Te 3 thin films and nanowires

Longo M;Cecchi S;Selmo S;Wiemer C;
2018

Abstract

Sb Te is a chalcogenide compound of great interest, due to its applications in the fields of phase change, thermoelectric devices, as well as of topological insulators. In this work, the MOCVD deposition of both Sb Te thin films and nanowires was performed by using the same set of precursors and exploiting the low temperature deposition for thin films and VLS mechanisms for nanowires. A special attention was dedicated to the analysis of the thermal properties, performed by scanning thermal microscopy and modulated photothermal radiometry techniques. The thermal conductivity of the thin layers was compared to that of a nanowire, finding that the values are comparable to those reported for bulk Sb Te .
2018
Istituto per la Microelettronica e Microsistemi - IMM
9781509051519
MOCVD
nanowires
Sb Te 2 3
thermal conductivity
thin films
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/367496
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