The main characteristics of the ENEA Discharge Produced Plasma (DPP) Extreme Ultraviolet (EUV) source are presented together with results of irradiations of various materials. The DPP EUV source, based on a Xe-plasma heated up to a temperature of 30 ÷ 40 eV, emits more than 30 mJ/sr/shot at 10 Hz rep. rate in the 10 ÷ 18 nm wavelength spectral range. The DPP is equipped with a debris mitigation system to protect particularly delicate components needed for patterning applications. The ENEA source has been successfully utilized for sub-micrometer pattern generation on photonic materials and on specifically designed chemically amplified resists. Details down to 100 nm have been replicated on such photoresists by our laboratory-scale apparatus for contact EUV lithography. Preliminary EUV irradiations of graphene films aimed at modifying its properties have been also performed.
The ENEA discharge produced plasma extreme ultraviolet source and its patterning applications
Businaro L;Gerardino A;
2018
Abstract
The main characteristics of the ENEA Discharge Produced Plasma (DPP) Extreme Ultraviolet (EUV) source are presented together with results of irradiations of various materials. The DPP EUV source, based on a Xe-plasma heated up to a temperature of 30 ÷ 40 eV, emits more than 30 mJ/sr/shot at 10 Hz rep. rate in the 10 ÷ 18 nm wavelength spectral range. The DPP is equipped with a debris mitigation system to protect particularly delicate components needed for patterning applications. The ENEA source has been successfully utilized for sub-micrometer pattern generation on photonic materials and on specifically designed chemically amplified resists. Details down to 100 nm have been replicated on such photoresists by our laboratory-scale apparatus for contact EUV lithography. Preliminary EUV irradiations of graphene films aimed at modifying its properties have been also performed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
