In order to assess the usability of X-ray absorption near-edge structure (XANES) for studying the structure of BO(n)-containing materials, the dependence of theoretical XANES at the B K-edge on the way the scattering potential is constructed is investigated. Real-space multiple-scattering calculations are performed for self-consistent and non-self-consistent potentials and for different ways of dealing with the core hole. It is found that in order to reproduce the principal XANES features it is sufficient to use a non-self-consistent potential with a relaxed and screened core hole. Employing theoretical modelling of XANES for studying the structure of boron-containing glasses is thus possible. The core hole affects the spectrum significantly, especially in the pre-edge region. In contrast to minerals, B K-edge XANES of BPO(4) can be reproduced only if a self-consistent potential is employed. (C) 2010 International Union of Crystallography Printed in Singapore - all rights reserved

Electronic structure effects on B K-edge XANES of minerals

Rocca Francesco
2010

Abstract

In order to assess the usability of X-ray absorption near-edge structure (XANES) for studying the structure of BO(n)-containing materials, the dependence of theoretical XANES at the B K-edge on the way the scattering potential is constructed is investigated. Real-space multiple-scattering calculations are performed for self-consistent and non-self-consistent potentials and for different ways of dealing with the core hole. It is found that in order to reproduce the principal XANES features it is sufficient to use a non-self-consistent potential with a relaxed and screened core hole. Employing theoretical modelling of XANES for studying the structure of boron-containing glasses is thus possible. The core hole affects the spectrum significantly, especially in the pre-edge region. In contrast to minerals, B K-edge XANES of BPO(4) can be reproduced only if a self-consistent potential is employed. (C) 2010 International Union of Crystallography Printed in Singapore - all rights reserved
2010
Istituto di fotonica e nanotecnologie - IFN
Istituto di fotonica e nanotecnologie - IFN
B K-edge XANES
borate glasses
minerals
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/36980
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