We calculate the mirror Chern number (MCN) and the band gap for the alloy Pb1-xSnxSe as a function of the concentration x by using virtual crystalline approximation. We use the electronic structure from the relativistic density functional theory calculations in the Generalized-Gradient-Approximation (GGA) and meta-GGA approximation. Our results obtained with the modified Becke-Johnson meta-GGA functional, are comparable with the available experimental data for the MCN as well as for the band gap. We advise to use modified Becke-Johnson approximation with the parameter c = 1.10 to describe the transition from trivial to topological phase for this class of compounds.

Topological transition in Pb1-xSnxSe using Meta-GGA exchange-correlation functional

Noce C;Autieri C
2019

Abstract

We calculate the mirror Chern number (MCN) and the band gap for the alloy Pb1-xSnxSe as a function of the concentration x by using virtual crystalline approximation. We use the electronic structure from the relativistic density functional theory calculations in the Generalized-Gradient-Approximation (GGA) and meta-GGA approximation. Our results obtained with the modified Becke-Johnson meta-GGA functional, are comparable with the available experimental data for the MCN as well as for the band gap. We advise to use modified Becke-Johnson approximation with the parameter c = 1.10 to describe the transition from trivial to topological phase for this class of compounds.
2019
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Insulators | Crystalline materials | Crystalline insulator
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/369875
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