The possibility to engineer the coupling of spin and valley physics is explored in ferroelectric oxide heterostructures with eg2 electronic configuration. We show that the polar structural distortion induces the appearance of spin-valley coupled properties, at the same time as being responsible for a topological transition from a quantum spin-Hall insulating phase to a trivial band insulator. The coupled spin-valley physics is affected by the topological band inversion in a nontrivial way; while the valley-dependent spin polarization of both conduction and valence bands is preserved, a change of the Berry curvature and of spin-valley selection rules is predicted, leading to different circular dichroic response as well as valley and spin Hall effects.

Topological phase transition coupled with spin-valley physics in ferroelectric oxide heterostructures

Barone P;Picozzi S
2017

Abstract

The possibility to engineer the coupling of spin and valley physics is explored in ferroelectric oxide heterostructures with eg2 electronic configuration. We show that the polar structural distortion induces the appearance of spin-valley coupled properties, at the same time as being responsible for a topological transition from a quantum spin-Hall insulating phase to a trivial band insulator. The coupled spin-valley physics is affected by the topological band inversion in a nontrivial way; while the valley-dependent spin polarization of both conduction and valence bands is preserved, a change of the Berry curvature and of spin-valley selection rules is predicted, leading to different circular dichroic response as well as valley and spin Hall effects.
2017
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/371181
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