We investigate Total Ionizing Dose effects on 4Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the WordLine selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations. © 2007 IEEE.
Total ionizing dose effects on 4Mbit phase change memory arrays
Fuochi Piergiorgio;Lavalle Marco
2007
Abstract
We investigate Total Ionizing Dose effects on 4Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the WordLine selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations. © 2007 IEEE.File in questo prodotto:
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