In this work, the fabrication, the electrical and optical characterization of red organic light emitting transistors using thin film made of alumina grown by atomic layer deposition (ALD) coupled with PMMA (poly(methyl-methacrylate)) as gate dielectric material are reported. Use of ALD-grown Al2O3 is shown to greatly reduce the operation range and the threshold voltage in this class of devices as compared to polymer-based dielectric counterpart, while at the same time comparable optical performances are maintained. Further, reducing the oxide layer thickness demonstrates the possibility of fine tuning the device working conditions, while maintaining optoelectronic performances, robustness and very low leakage current.

Engineering organic/inorganic alumina-based films as dielectrics for red organic light emitting transistors

Cianci Elena;Muccini Michele
2016

Abstract

In this work, the fabrication, the electrical and optical characterization of red organic light emitting transistors using thin film made of alumina grown by atomic layer deposition (ALD) coupled with PMMA (poly(methyl-methacrylate)) as gate dielectric material are reported. Use of ALD-grown Al2O3 is shown to greatly reduce the operation range and the threshold voltage in this class of devices as compared to polymer-based dielectric counterpart, while at the same time comparable optical performances are maintained. Further, reducing the oxide layer thickness demonstrates the possibility of fine tuning the device working conditions, while maintaining optoelectronic performances, robustness and very low leakage current.
2016
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
Alumina
Atomic layer deposition
Dielectrics
Gate oxide
Organic light emitting devices
Organic light emitting transistor
Thin film
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/373500
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