We analyzed the effects of Electrostatic Discharge events on large area high voltage Organic Thin Film Transistors, using the transmission line pulsing technique. These transistors survived ESD events exceeding 500V. A partial dielectric breakdown occurred at voltage higher tan 600V. Small mobility and threshold voltage variations are observed, prior to breakdown.
Analysis of ESD effects on organic thin-film-transistors by means of TLP technique
Muccini M
2016
Abstract
We analyzed the effects of Electrostatic Discharge events on large area high voltage Organic Thin Film Transistors, using the transmission line pulsing technique. These transistors survived ESD events exceeding 500V. A partial dielectric breakdown occurred at voltage higher tan 600V. Small mobility and threshold voltage variations are observed, prior to breakdown.File in questo prodotto:
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