Nanoscale dielectric films made of alumina grown by atomic layer deposition (ALD) have been implemented as high-k dielectric material in organic light emitting transistors (OLETs). This leads to the reduction of both the threshold and operating bias regime of the devices while obtaining comparable light emission, when compared to our standard polymer-based dielectric platform.
Organic light emitting transistors (OLETs) using ALD-grown AL2 O3 dielectric
Muccini Michele
2016
Abstract
Nanoscale dielectric films made of alumina grown by atomic layer deposition (ALD) have been implemented as high-k dielectric material in organic light emitting transistors (OLETs). This leads to the reduction of both the threshold and operating bias regime of the devices while obtaining comparable light emission, when compared to our standard polymer-based dielectric platform.File in questo prodotto:
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