In order to maximise the absoprtion efficiency ofX-ray detectors for high energy photons above 20 keV, compound semiconductor sensors with high atomic number (Z) are under investigation. A promising material for future detector systems is Cadmium Zinc Telluride (CdZnTe). Redlen Technologies developed a novel CdZnTe material, optimised for applications with high photon fluxes. Such a material was used to fabricate pixelated CdZnTe sensors with a pitch of 55 ?m and 110 ?m. The sensors were flip-chip bonded to Timepix ASICs and their performance was characterised at the European Synchrotron Radiation Facility (ESRF) with conventional X-ray sources and monochromatic sychrotron beams using the MAXIPIX readout system. We present results concerning the uniformity, the stability and the spatial resolution of the sensors, obtained with X-ray energies up to 60 keV.
Characterisation of pixelated CdZnTe sensors using MAXIPIX
S Zanettini;A Zappettini
2019
Abstract
In order to maximise the absoprtion efficiency ofX-ray detectors for high energy photons above 20 keV, compound semiconductor sensors with high atomic number (Z) are under investigation. A promising material for future detector systems is Cadmium Zinc Telluride (CdZnTe). Redlen Technologies developed a novel CdZnTe material, optimised for applications with high photon fluxes. Such a material was used to fabricate pixelated CdZnTe sensors with a pitch of 55 ?m and 110 ?m. The sensors were flip-chip bonded to Timepix ASICs and their performance was characterised at the European Synchrotron Radiation Facility (ESRF) with conventional X-ray sources and monochromatic sychrotron beams using the MAXIPIX readout system. We present results concerning the uniformity, the stability and the spatial resolution of the sensors, obtained with X-ray energies up to 60 keV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
