Due to the great development of light sources for several applications from displays to lighting, great eforts are devoted to fnd stable and efcient visible emitting materials. Moreover, the requirement of Si compatibility could enlarge the range of applications inside microelectronic chips. In this scenario, we have studied the emission properties of bismuth doped yttrium oxide thin flms grown on crystalline silicon. Under optical pumping at room temperature a stable and strong visible luminescence has been observed. In particular, by the involvement of Bi ions in the two available lattice sites, the emission can be tuned from violet to green by changing the excitation wavelength. Moreover, under electron beam at low accelerating voltages (3keV) a blue emission with high efciency and excellent stability has been recorded. The color is generated by the involvement of Bi ions in both the lattice sites. These peculiarities make this material interesting as a luminescent medium for applications in light emitting devices and feld emission displays by opening new perspectives for the realization of silicon-technology compatible light sources operating at room temperature.
Visible emission from bismuth-doped yttrium oxide thin films for lighting and display applications
A Scarangella;F Fabbri;F Rossi;F Priolo;M Miritello
2017
Abstract
Due to the great development of light sources for several applications from displays to lighting, great eforts are devoted to fnd stable and efcient visible emitting materials. Moreover, the requirement of Si compatibility could enlarge the range of applications inside microelectronic chips. In this scenario, we have studied the emission properties of bismuth doped yttrium oxide thin flms grown on crystalline silicon. Under optical pumping at room temperature a stable and strong visible luminescence has been observed. In particular, by the involvement of Bi ions in the two available lattice sites, the emission can be tuned from violet to green by changing the excitation wavelength. Moreover, under electron beam at low accelerating voltages (3keV) a blue emission with high efciency and excellent stability has been recorded. The color is generated by the involvement of Bi ions in both the lattice sites. These peculiarities make this material interesting as a luminescent medium for applications in light emitting devices and feld emission displays by opening new perspectives for the realization of silicon-technology compatible light sources operating at room temperature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.