We report on the fabrication and characterization of single-transverse mode 1.3 ?m InAs/InGaAs QD lasers in a wide temperature range. Open eye patterns up to 10 Gb/s are reported, whereas a characteristic temperature of about 110 K has been measured in the whole temperature range (15°C - 85°C). These results were obtained by exploiting heterostructures containing six-layers of high modal gain InAs quantum dots grown without incorporation of p-doping. QD lasers exhibited a saturation modal gain as high as 6 cm-1 per QD layer, which linearly increases with the numbers of the quantum dot layers.
High gain and high speed 1.3 ?m InAs/InGaAs quantum dot lasers
Todaro;M T;Passaseo A;
2007
Abstract
We report on the fabrication and characterization of single-transverse mode 1.3 ?m InAs/InGaAs QD lasers in a wide temperature range. Open eye patterns up to 10 Gb/s are reported, whereas a characteristic temperature of about 110 K has been measured in the whole temperature range (15°C - 85°C). These results were obtained by exploiting heterostructures containing six-layers of high modal gain InAs quantum dots grown without incorporation of p-doping. QD lasers exhibited a saturation modal gain as high as 6 cm-1 per QD layer, which linearly increases with the numbers of the quantum dot layers.File in questo prodotto:
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