The Ion Beam Sputtering (IBS) and the Dual Ion Beam Sputtering (DIBS) allow independent control of the deposition kinetics and the hydrogenation of hydrogenated amorphous silicon (a-Si: H) films. This makes it possible to investigate the correlations between the disorder in the amorphous matrix and the optical parameters, such as optical gap and Urbach energy. Data were taken for samples grown at different substrate temperatures, having different hydrogen content, or presenting damage induced by argon bombardment. In addition, an experimental evaluation of the shift in optical gap due to the alloying with H was carried out and gave 6.63 x 1O-3eV/at %.

Properties of amorphous Si:H films prepared by Dual Ion Beam Sputtering

L Mariucci;
1988

Abstract

The Ion Beam Sputtering (IBS) and the Dual Ion Beam Sputtering (DIBS) allow independent control of the deposition kinetics and the hydrogenation of hydrogenated amorphous silicon (a-Si: H) films. This makes it possible to investigate the correlations between the disorder in the amorphous matrix and the optical parameters, such as optical gap and Urbach energy. Data were taken for samples grown at different substrate temperatures, having different hydrogen content, or presenting damage induced by argon bombardment. In addition, an experimental evaluation of the shift in optical gap due to the alloying with H was carried out and gave 6.63 x 1O-3eV/at %.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/3775
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact