We describe here the dual-ion-beam sputtering method for the production of hydrogenated amorphous silicon. The spatial distribution of the ion beams was tested and correlated to the transport properties of the films. Visible and IR absorption measurements were also used to characterize the material.
Dual Ion Beam Sputtering technique for the production of a-Si:H
G Fortunato;L Mariucci;
1984
Abstract
We describe here the dual-ion-beam sputtering method for the production of hydrogenated amorphous silicon. The spatial distribution of the ion beams was tested and correlated to the transport properties of the films. Visible and IR absorption measurements were also used to characterize the material.File in questo prodotto:
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