Photo Induced Discharge technique has been used in order to probe the density of states at and below the Fermi level before and after positive gate bias-stress. From the results presented here, flat-band voltage variation rather than gap-state modifications seems to be the major effect induced by the bias-stress.
Application of the photo induced discharge technique for the investigation of a-Si:H thin-film transistor instability
G Fortunato;L Mariucci
1993
Abstract
Photo Induced Discharge technique has been used in order to probe the density of states at and below the Fermi level before and after positive gate bias-stress. From the results presented here, flat-band voltage variation rather than gap-state modifications seems to be the major effect induced by the bias-stress.File in questo prodotto:
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