Boron- and phosphorus-doped hydrogenated amorphous sd~con films were obtamed by a reactwe evaporatmn method The influence of doping on a c conductwlty was mvesUgated m the frequency range from 10 Hz to 100 kHz and m the temperature range from 150 to 450 K For all the samples high frequency conductwlty follows the A~o' law Experimental data were analysed with the quantum mechamcal tunnelhng and the correlated barrier hoppmg models, using the pair and the extended pair approximations
Frequency-dependent conductivity in boron- and phosphorus-doped amorphous silicon films
S Trusso
1992
Abstract
Boron- and phosphorus-doped hydrogenated amorphous sd~con films were obtamed by a reactwe evaporatmn method The influence of doping on a c conductwlty was mvesUgated m the frequency range from 10 Hz to 100 kHz and m the temperature range from 150 to 450 K For all the samples high frequency conductwlty follows the A~o' law Experimental data were analysed with the quantum mechamcal tunnelhng and the correlated barrier hoppmg models, using the pair and the extended pair approximationsFile in questo prodotto:
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Descrizione: Frequency-dependent conductivity in boron- and phosphorus-doped amorphous silicon films
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