We present a new analytical approach for understanding and tuning the composition of ternary nanowires of MA' semiconductor compounds and interfacial abruptness of axial nanowire heterostructures. It is shown how the interfacial abruptness can be sharpened to the monolayer limit in Au catalyzed axial InP/InAs/InP NW heterostructures.
Modeling the comosition of ternary III-V nanowires and axial nanowire heterostructures
Zannier V;Rossi F;Ercolani D;Battiato S;Sorba L;
2018
Abstract
We present a new analytical approach for understanding and tuning the composition of ternary nanowires of MA' semiconductor compounds and interfacial abruptness of axial nanowire heterostructures. It is shown how the interfacial abruptness can be sharpened to the monolayer limit in Au catalyzed axial InP/InAs/InP NW heterostructures.File in questo prodotto:
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