Resistive-switching random access memory (RRAM) devices are attracting increasing interest as a potential candidate for high-density nonvolatile memory devices. One of the main issues toward RRAM feasibility is the reduction of the reset current I(reset) necessary to restore the high-resistance state in the device. I(reset) can be reduced by controlling the size of the conductive filament responsible for the low-resistance state; however, available data only focus on direct-current reset analysis. This letter addresses I(reset) reduction under pulsed operation. Unstable reset behaviors, including set-reset and set instability, are shown to occur during relatively fast pulses and starting from set states with relatively large resistance values. These instability effects limit I(reset) reduction, posing a potential issue of minimum reset current achievable in RRAM devices.
Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices
Spiga S;
2011
Abstract
Resistive-switching random access memory (RRAM) devices are attracting increasing interest as a potential candidate for high-density nonvolatile memory devices. One of the main issues toward RRAM feasibility is the reduction of the reset current I(reset) necessary to restore the high-resistance state in the device. I(reset) can be reduced by controlling the size of the conductive filament responsible for the low-resistance state; however, available data only focus on direct-current reset analysis. This letter addresses I(reset) reduction under pulsed operation. Unstable reset behaviors, including set-reset and set instability, are shown to occur during relatively fast pulses and starting from set states with relatively large resistance values. These instability effects limit I(reset) reduction, posing a potential issue of minimum reset current achievable in RRAM devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
