We demonstrate a programmable quantum Hall circuit that implements an iterative voltage bisection scheme and allows any binary fraction (k/2(n)) of the fundamental resistance quantum R-K/2 = h/2e(2) to be obtained. The circuit requires a number n of bisection stages that only scales logarithmically with the resolution of the set of possible output fractions. The value of k can be set to any integer between 1 and 2(n) by proper and easily predictable gate configuration. The architecture exploits gate-controlled routing, mixing, and equilibration of edge modes of robust quantum Hall states. The device does not contain internal Ohmic contacts and is thus naturally robust towards stray-resistance effects. Our scheme offers an alternative way to obtain custom quantum Hall resistance standards, and its potential advantages are discussed. The basic viability of the approach is demonstrated in a proof-of-principle two-stage bisection circuit built on a high-mobility GaAs/(Al, Ga)As heterostructure operating at a temperature of 260 mK and a magnetic field of 4.1 T. Our prototype achieves a relative quantization precision of the order of 10(-4), which is limited by the experimental setup rather than by the circuit itself.

Cascaded Quantum Hall Bisection and Applications to Quantum Metrology

Heun, S.;Biasiol, G.;Roddaro, S.
2020

Abstract

We demonstrate a programmable quantum Hall circuit that implements an iterative voltage bisection scheme and allows any binary fraction (k/2(n)) of the fundamental resistance quantum R-K/2 = h/2e(2) to be obtained. The circuit requires a number n of bisection stages that only scales logarithmically with the resolution of the set of possible output fractions. The value of k can be set to any integer between 1 and 2(n) by proper and easily predictable gate configuration. The architecture exploits gate-controlled routing, mixing, and equilibration of edge modes of robust quantum Hall states. The device does not contain internal Ohmic contacts and is thus naturally robust towards stray-resistance effects. Our scheme offers an alternative way to obtain custom quantum Hall resistance standards, and its potential advantages are discussed. The basic viability of the approach is demonstrated in a proof-of-principle two-stage bisection circuit built on a high-mobility GaAs/(Al, Ga)As heterostructure operating at a temperature of 260 mK and a magnetic field of 4.1 T. Our prototype achieves a relative quantization precision of the order of 10(-4), which is limited by the experimental setup rather than by the circuit itself.
2020
Istituto Officina dei Materiali - IOM -
Istituto Nanoscienze - NANO
quantum Hall
Quantum Metrology
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/380519
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