The electrical properties of untreated and hydrogen-irradiated GaAs(1-x)N(x) are investigated by conductive-probe atomic force microscopy (CP-AFM). After hydrogen irradiation, the resistance R of GaAs(1-x)N(x) increases by more than three orders of magnitude while that of a N-free GaAs reference slightly decreases. Thermal annealing at 550 degrees C of H-irradiated GaAs(1-x)N(x) restores the pristine electrical properties of the as-grown sample thus demonstrating that this phenomenon is fully reversible. These effects are attributed to the nitrogen-hydrogen complexes that passivate N in GaAs(1-x)N(x) (thus restoring the energy gap of N-free GaAs) and, moreover, reduce the carrier scattering time by more than one order of magnitude. This opens up a route to the fabrication of planar conductive/resistive/conductive heterostructures with submicrometer spatial resolution, which is also reported here.
Giant and reversible enhancement of the electrical resistance of GaAs(1-x)N(x) by hydrogen irradiation
Martelli F;Mariucci L;
2011
Abstract
The electrical properties of untreated and hydrogen-irradiated GaAs(1-x)N(x) are investigated by conductive-probe atomic force microscopy (CP-AFM). After hydrogen irradiation, the resistance R of GaAs(1-x)N(x) increases by more than three orders of magnitude while that of a N-free GaAs reference slightly decreases. Thermal annealing at 550 degrees C of H-irradiated GaAs(1-x)N(x) restores the pristine electrical properties of the as-grown sample thus demonstrating that this phenomenon is fully reversible. These effects are attributed to the nitrogen-hydrogen complexes that passivate N in GaAs(1-x)N(x) (thus restoring the energy gap of N-free GaAs) and, moreover, reduce the carrier scattering time by more than one order of magnitude. This opens up a route to the fabrication of planar conductive/resistive/conductive heterostructures with submicrometer spatial resolution, which is also reported here.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
