Semiconductor eterostructures based on different compositions of the same alloyes are important for the realization of new electronic and photonic devices. Stepped quantum wells are considered as good candidates for enhancement of non linear optical properties. They have been, however , very few studies devoted to the properties of the alloy-alloy interfaces common to all these materials.
Spectroscopic signature of alloy-alloy interface in ingaas-gaas(001) stepped quantum wells
Schiumarini D;
2002
Abstract
Semiconductor eterostructures based on different compositions of the same alloyes are important for the realization of new electronic and photonic devices. Stepped quantum wells are considered as good candidates for enhancement of non linear optical properties. They have been, however , very few studies devoted to the properties of the alloy-alloy interfaces common to all these materials.File in questo prodotto:
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