The gaseous phase produced by laser ablation of a molybdenum silicide target has been analysed by time-of-flight mass spectrometry, emission spectroscopy and fast imaging performed by an ICCD camera, in order to obtain informations about the mechanisms involved in the laser deposition of MoSi2 thin films. During laser ablation, the emission spectra indicate a target temperature of about 7200 K, while the mass spectra evidence the presence of clusters corresponding to the formula (MoSi2)(n) with n up to 2. The results suggest that the possibility to deposit stoichiometric thin films is related to the composition of the plasma and, in particular to the presence of cluster with the right silicon molybdenum ratio. The presence of a large amount of clusters could be due to reactions in the plasma.

Pulsed laser ablation of MoSi2: gas phase analysis

Santagata A;
2002

Abstract

The gaseous phase produced by laser ablation of a molybdenum silicide target has been analysed by time-of-flight mass spectrometry, emission spectroscopy and fast imaging performed by an ICCD camera, in order to obtain informations about the mechanisms involved in the laser deposition of MoSi2 thin films. During laser ablation, the emission spectra indicate a target temperature of about 7200 K, while the mass spectra evidence the presence of clusters corresponding to the formula (MoSi2)(n) with n up to 2. The results suggest that the possibility to deposit stoichiometric thin films is related to the composition of the plasma and, in particular to the presence of cluster with the right silicon molybdenum ratio. The presence of a large amount of clusters could be due to reactions in the plasma.
2002
Istituto di Nanotecnologia - NANOTEC
Molybdenum silicide; Pulsed laser ablation
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/38258
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