A trend of increased near-surface valence band maximum band bending with increasing O/Ga relative fraction was observed, extrapolating to 2.7 eV +/- 0.1 eV for pristine GaN surfaces (0% O 1s peak area). This trend of apparent oxide overlayer coverage affecting the band bending linearly could lead to better understanding and characterization of oxidized GaN surfaces to control band bending for sensors or other devices
Surface oxide relationship to band bending in GaN
M Losurdo;G Bruno
2006
Abstract
A trend of increased near-surface valence band maximum band bending with increasing O/Ga relative fraction was observed, extrapolating to 2.7 eV +/- 0.1 eV for pristine GaN surfaces (0% O 1s peak area). This trend of apparent oxide overlayer coverage affecting the band bending linearly could lead to better understanding and characterization of oxidized GaN surfaces to control band bending for sensors or other devicesFile in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
prod_33840-doc_29958.pdf
accesso aperto
Descrizione: articolo pubblicato
Dimensione
130.32 kB
Formato
Adobe PDF
|
130.32 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
