In situ spectroscopic ellipsometry kinetic characterization is used to monitor the behavior of Ga atoms during and after Ga flux impingement upon a (0001) GaN surface at various temperatures in the range of 680 - 750 S degrees C. The observed saturation of the pseudodielectric function verifies the existence of a critical thickness for the Ga wetting layer, while the observed desorption delay after the Ga flux is terminated indicates the presence of two Ga phases, one acting as a Ga reservoir to compensate the desorption of the wetting layer until the other phase is depleted.
The kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces
MLosurdo;G Bruno;
2006
Abstract
In situ spectroscopic ellipsometry kinetic characterization is used to monitor the behavior of Ga atoms during and after Ga flux impingement upon a (0001) GaN surface at various temperatures in the range of 680 - 750 S degrees C. The observed saturation of the pseudodielectric function verifies the existence of a critical thickness for the Ga wetting layer, while the observed desorption delay after the Ga flux is terminated indicates the presence of two Ga phases, one acting as a Ga reservoir to compensate the desorption of the wetting layer until the other phase is depleted.File in questo prodotto:
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