Thin films of zinc oxide have been deposited by reactive pulsed laser ablation of Zn and ZnO targets in presence of a radio frequency (RF) generated oxygen plasma. The gaseous species have been deposited at several substrate temperatures, using the on-axis configuration, on Si (1 0 0). Thin films have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and infrared spectroscopy. A comparison among conventional PLD and reactive RF plasma-assisted PLD has been performed.
Deposition of zinc oxide thin films by reactive pulsed laser ablation
Orlando S
2006
Abstract
Thin films of zinc oxide have been deposited by reactive pulsed laser ablation of Zn and ZnO targets in presence of a radio frequency (RF) generated oxygen plasma. The gaseous species have been deposited at several substrate temperatures, using the on-axis configuration, on Si (1 0 0). Thin films have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and infrared spectroscopy. A comparison among conventional PLD and reactive RF plasma-assisted PLD has been performed.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


