Thin layers of AlN and GaN have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H- and 6H-SiC(0001)(Si) substrates. The impact of the SiC surface preparation and oxide removal via a Ga deposition and desorption process on the chemistry and structure of the GaN/SiC and AlN/SiC interfaces, and on the GaN/SiC subsurface reactivity is characterized. We also investigate the impact of this process on growth mode evolution.
Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)
M Losurdo;P Capezzuto;
2005
Abstract
Thin layers of AlN and GaN have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H- and 6H-SiC(0001)(Si) substrates. The impact of the SiC surface preparation and oxide removal via a Ga deposition and desorption process on the chemistry and structure of the GaN/SiC and AlN/SiC interfaces, and on the GaN/SiC subsurface reactivity is characterized. We also investigate the impact of this process on growth mode evolution.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
prod_33972-doc_30452.pdf
solo utenti autorizzati
Descrizione: articolo pubblicato
Dimensione
419.83 kB
Formato
Adobe PDF
|
419.83 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
