A new spin-on alumina-based resist exhibits excellent performance in terms of both achievable lateral resolution and etch resistance in fluorine-based noncryo-cooled dry etching processes. The resist has selectivity greater than 100: 1 with respect to the underlying silicon during the etching process, patternability with various lithographic tools (UV, X-rays, electron beam, and nanoimprint lithography), and positive and negative tone behavior depending only on the developer chemistry.
Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching (vol 25, pg 6261, 2013)
Grenci Gianluca;Pozzato Alessandro;Tormen Massimo;
2014
Abstract
A new spin-on alumina-based resist exhibits excellent performance in terms of both achievable lateral resolution and etch resistance in fluorine-based noncryo-cooled dry etching processes. The resist has selectivity greater than 100: 1 with respect to the underlying silicon during the etching process, patternability with various lithographic tools (UV, X-rays, electron beam, and nanoimprint lithography), and positive and negative tone behavior depending only on the developer chemistry.File in questo prodotto:
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