Controlling Ambipolar Transport and Voltage Inversion in Solution-Processed Thin-Film Devices through Polymer Blending

Ambipolar semiconductors are attracting a great interest as building blocks for photovoltaics and logic applications. Field-effect transistors built on solution-processable ambipolar materials hold strong promise for the engineering of large-area low-cost logic circuits with a reduced number of devices components. Such devices still suffer from a number of obstacles including the challenging processing, the low I-on/I-off, the unbalanced mobility, and the low gain in complementary metal-oxide-semiconductor (CMOS)-like circuits. Here, we demonstrate that the simple approach of blending commercially available n- and p-type polymers such as P(NDI2OD-T2), P3HT, PCD-TPT, PDVT-8, and IIDDT-C3 can yield high-performing ambipolar field-effect transistors with balanced mobilities and I-on/I-off > 10(7). Each single component was studied separately and upon blending by means of electrical characterization, ambient ultraviolet photoelectron spectroscopy, atomic force microscopy, and grazing incidence wide angle X-ray scattering to unravel the correlation between the morphology/structure of the semiconducting films and their functions. Blends of n- and p-type semiconductors were used to fabricate CMOS-like inverter circuits with state-of-the-art gains over 160 in the case of P(NDI2OD-T2) blended with PDVT-8. Significantly, our blending approach was successful in producing semiconducting films with balanced mobilities for each of the four tested semiconductor blends, although the films displayed different structural and morphological features. Our strategy, which relies on establishing a correlation between ambipolar performances, film morphology, molecular structure, and blending ratio, is extremely efficient and versatile; thus it could be applied to a wide range of polymers or solution processable small molecules.