A dynamical model giving the infrared plasma reflection in a semiconductor is used to reproduce the transient reflectivity at 10.6 mum due to an intense photo-plasma. In this way we have derived the 'cubed' coefficient of the Auger recombination in indium arsenide and gallium antimonide from the stationary peak reflectivity produced by a ns Nd laser. We have derived the cubic coefficients 12(4) x 10(-27) cm(6) s(-1) and 9(3) x 10(-28) cm(6) s(-1) for InAs and GaSb respectively.
The Auger recombination coefficient in inas and gasb derived from
2002
Abstract
A dynamical model giving the infrared plasma reflection in a semiconductor is used to reproduce the transient reflectivity at 10.6 mum due to an intense photo-plasma. In this way we have derived the 'cubed' coefficient of the Auger recombination in indium arsenide and gallium antimonide from the stationary peak reflectivity produced by a ns Nd laser. We have derived the cubic coefficients 12(4) x 10(-27) cm(6) s(-1) and 9(3) x 10(-28) cm(6) s(-1) for InAs and GaSb respectively.File in questo prodotto:
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