Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consisting of a film of armchair GNRs with different structures (namely width and/or length) as the transistor channel, contacted with narrowly spaced graphene sheets as the source-drain electrodes. By analyzing several tens of junctions for each individual GNR type, we observe that the values of the output current display a width-dependent behavior, indicating electronic bandgaps in good agreement with the predicted theoretical values. These results provide insights into the link between the ribbon structure and the device properties, which are fundamental for the development of GNR-based electronics.

Structure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes

Martini L;Fantuzzi P;Candini A
2019

Abstract

Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consisting of a film of armchair GNRs with different structures (namely width and/or length) as the transistor channel, contacted with narrowly spaced graphene sheets as the source-drain electrodes. By analyzing several tens of junctions for each individual GNR type, we observe that the values of the output current display a width-dependent behavior, indicating electronic bandgaps in good agreement with the predicted theoretical values. These results provide insights into the link between the ribbon structure and the device properties, which are fundamental for the development of GNR-based electronics.
2019
Istituto per la Sintesi Organica e la Fotoreattivita' - ISOF
Istituto Nanoscienze - NANO
Inglese
146
36
43
https://www.sciencedirect.com/science/article/abs/pii/S0008622319300764
Sì, ma tipo non specificato
ON-SURFACE SYNTHESIS; DEPOSITION; FABRICATION
12
info:eu-repo/semantics/article
262
Martini, L; Chen, Z; Mishra, N; Barin, Gb; Fantuzzi, P; Ruffieux, P; Fasel, R; Feng, X; Narita, A; Coletti, C; Mullen, K; Candini, A
01 Contributo su Rivista::01.01 Articolo in rivista
none
   Molecular Quantum Spintronics
   MOQUAS
   FP7
   610449

   Graphene-based disruptive technologies
   GrapheneCore1
   H2020
   696656

   Graphene Flagship Core Project 2
   GrapheneCore2
   H2020
   785219
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/388160
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