Here, we present a suitable advancement of parallel local oxidation nanolithography, demonstrating its feasibility in alternate current mode (AC-PLON). For demonstration, we fabricated model structures consisting of an array of parallel nanostripes of electrochemical SiOx with a controlled roughness. Besides, we proved the repeatability of AC-PLON and its integrability with conventional parallel local oxidation nanolithography.

AC parallel local oxidation of silicon

Gentili Denis;Barbalinardo Marianna;Morandi Vittorio;Ortolani Luca;Ruani Giampiero;Cavallini Massimiliano
2019

Abstract

Here, we present a suitable advancement of parallel local oxidation nanolithography, demonstrating its feasibility in alternate current mode (AC-PLON). For demonstration, we fabricated model structures consisting of an array of parallel nanostripes of electrochemical SiOx with a controlled roughness. Besides, we proved the repeatability of AC-PLON and its integrability with conventional parallel local oxidation nanolithography.
2019
Istituto per la Microelettronica e Microsistemi - IMM
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
lithography
local oxidation
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/389976
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