Portable Immunosensor Based on Extended Gate--Field Effect Transistor for Rapid, Sensitive Detection of Cancer Markers

We present an immunosensor for the rapid and sensitive detection of the p53oncosuppressor protein and of its mutated form p53R175H, which are both valuable cancerbiomarkers. The sensor is based on the accurate measurement of the source-drain current variationof a metal oxide semiconductor field-effect transistor, as due to the gate potential changing arisingfrom charge release upon the selective capture of a biomarker by the partner immobilized on asensing surface connected to the gate electrode. A suitable microelectronic system is implementedto combine high current resolution, which is needed to be competitive with standardimmunoassays, with compact dimensions of the final sensor device.