We present an unconventional scheme for acoustic charge transport devices based on a n-i-n lateral junction as electron injector. We show that surface acoustic waves (SAWs) are able to pick up electrons from a current flowing through the n-i-n junction and steer them towards the Ohmic output contact. Acoustic charge transport was studied at various temperatures, as a function of injector current, voltage bias, and SAW power. The possibility to modulate the acoustoelectric current by means of lateral in-plane gates is also discussed. The main advantage of our approach relies on the possibility to drive the n-i-n injector by means of both voltage and current sources, thus allowing to sample and process voltage and current signals. (c) 2006 American Institute of Physics.

Acoustic charge transport in a n-i-n three terminal device

Cecchini M;De Simoni G;
2006

Abstract

We present an unconventional scheme for acoustic charge transport devices based on a n-i-n lateral junction as electron injector. We show that surface acoustic waves (SAWs) are able to pick up electrons from a current flowing through the n-i-n junction and steer them towards the Ohmic output contact. Acoustic charge transport was studied at various temperatures, as a function of injector current, voltage bias, and SAW power. The possibility to modulate the acoustoelectric current by means of lateral in-plane gates is also discussed. The main advantage of our approach relies on the possibility to drive the n-i-n injector by means of both voltage and current sources, thus allowing to sample and process voltage and current signals. (c) 2006 American Institute of Physics.
2006
Surface acoustic wave
quantum transport
acoustoelectric current
lateral junction
semiconductor heterostructure
quantum well
Gallium Arsenide
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/391503
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