Probing the spatial extension of light trapping-induced enhanced Raman scattering in high-density Si nanowire arrays

This paper reports an experimental investigation of surface-enhanced Raman scattering in high-density Si nanowire arrays obtained by electroless etching. A direct relationship between light trapping capabilities of Si nanowires and enhanced Raman scattering was demonstrated. Optimized arrays allowed for a remarkable increase of Raman sensitivity in comparison to reference planar samples. As a result, the detection limit of molecular probes under resonant excitation (e.g. methylene blue) can be extended by three orders of magnitude. In addition, continuous ultrathin films, that cannot be analyzed in conventional Raman experiments, are made detectable. In the case of anatase thin films, the detection limit of 5 nm was reached. Raman spectra of Si/TiO core/shell heterostructures demonstrate that the enhanced field resulting from surface multiple scattering is characterized by a large spatial extension (about fifty nanometers), making these materials a potential alternative to plasmonic metals for SERS experiments.