The "two-step" growth technique has been used to grow atomically uniform Ag films on 7 × 7 Si(111) and8 × 8 ?-Si3N4(0001)/Si(111) surfaces. Angle-resolved photoemission spectroscopy reveals the formation of spquantum well states in the Ag films with distinct properties in the two cases. It is shown that the valence electronsin silver can be confined in the fundamental gap of a less than 1-nm-thin nitride layer, effectively decoupling theAg and Si states.
Effect of a subnanometer thin insulator layer at the Ag/Si(111) interface through the observation of quantum well states
R Flammini;S Colonna;P M Sheverdyaeva;P Moras
2021
Abstract
The "two-step" growth technique has been used to grow atomically uniform Ag films on 7 × 7 Si(111) and8 × 8 ?-Si3N4(0001)/Si(111) surfaces. Angle-resolved photoemission spectroscopy reveals the formation of spquantum well states in the Ag films with distinct properties in the two cases. It is shown that the valence electronsin silver can be confined in the fundamental gap of a less than 1-nm-thin nitride layer, effectively decoupling theAg and Si states.File in questo prodotto:
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Descrizione: Effect of a subnanometer thin insulator layer at the Ag/Si(111) interface through the observation of quantum well states
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prod_456253-doc_176528.pdf
solo utenti autorizzati
Descrizione: Effect of a subnanometer thin insulator layer at the Ag/Si(111) interface through the observation of quantum well states
Tipologia:
Versione Editoriale (PDF)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
1.74 MB
Formato
Adobe PDF
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1.74 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
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