Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called "memristor". So, we have used the memristor's direct current (DC) current-voltage characteristic for modeling the UJT's DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.

Torus Breakdown In A Uni Junction Memristor

Meucci Riccardo;Euzzor Stefano
2018

Abstract

Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called "memristor". So, we have used the memristor's direct current (DC) current-voltage characteristic for modeling the UJT's DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.
2018
UJT
memristor
torus breakdown
bifurcation
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/397095
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