Fabrication of thin-film multilayer structures by sputtering typically requires a multi-cathode deposition machine. This study proposes a simpler approach based on the radio-frequency power modulation; thin silicon nitride (SiNx) thin films were prepared by radio-frequency reactive sputtering in an (Ar + N2) atmosphere at room temperature. The samples were analyzed to highlight the effects of different deposition conditions on the morphological and optical properties of the films in the visible and near/mid-infrared (IR) regions. The refractive index of the films was varied from 1.5 - 2.5 (at ?=800 nm) by tuning the sputtering power. IR reflectance measurements indicated the absence of spurious (oxygen- or hydrogen-based) phases; atomic force microscopy and scanning electron microscopy indicated flat and homogeneous sample surfaces. ? 2021 Elsevier B.V.

Tuning silicon nitride refractive index through radio-frequency sputtering power

De Luca D;D'Alessandro C;Caldarelli A;Di Meo V;Iodice M;Russo;
2021

Abstract

Fabrication of thin-film multilayer structures by sputtering typically requires a multi-cathode deposition machine. This study proposes a simpler approach based on the radio-frequency power modulation; thin silicon nitride (SiNx) thin films were prepared by radio-frequency reactive sputtering in an (Ar + N2) atmosphere at room temperature. The samples were analyzed to highlight the effects of different deposition conditions on the morphological and optical properties of the films in the visible and near/mid-infrared (IR) regions. The refractive index of the films was varied from 1.5 - 2.5 (at ?=800 nm) by tuning the sputtering power. IR reflectance measurements indicated the absence of spurious (oxygen- or hydrogen-based) phases; atomic force microscopy and scanning electron microscopy indicated flat and homogeneous sample surfaces. ? 2021 Elsevier B.V.
2021
Istituto di Scienze Applicate e Sistemi Intelligenti "Eduardo Caianiello" - ISASI
Atomic force microscopy
silicon nitride
refractive index
rf sputtering
reactive deposition
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/398066
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