Theoretical models describing the trasport of oxygen in metal/atmophere systems under different fluidynamic conditions have been developed by different authors. In the present study, as in previous ones, the molecular diffusion is the process mainly controlling the exchange of metter between the liquid metal and the atmosphere. So, in this paper a diffusional model is proposed accounting for volatile oxides and for gas phase homogeneus reactions by means of two limiting conditions: instantaneus reactions and null reactions. For the boundary conditions, the model assumes a bulk flow composition of the gas layer sorrounding the liquid on the upper side and a local equilibrium constraint at the liquid interface. The asymptotic behavior of the system is described, enabling the prediction of the direction of the net oxygen flux. It has been demostrated that the results obtained are valid for any type of homogeneus gas phase reactivity, provided that no oxide fog is formed in the gas. The model is useful to correctly guide thecnological processes such as single crystal growth: in the paper the application to the melt silicon/oxygen system is discussed. Finally, the present model can synthesize apparently contradictory experimental measurements of surface tension available in literature into a unique portrait
A theoretical approach for the interpretation of liquid metal surface tension measurements in the presence of oxygen
Ricci E;Passerone A
2000
Abstract
Theoretical models describing the trasport of oxygen in metal/atmophere systems under different fluidynamic conditions have been developed by different authors. In the present study, as in previous ones, the molecular diffusion is the process mainly controlling the exchange of metter between the liquid metal and the atmosphere. So, in this paper a diffusional model is proposed accounting for volatile oxides and for gas phase homogeneus reactions by means of two limiting conditions: instantaneus reactions and null reactions. For the boundary conditions, the model assumes a bulk flow composition of the gas layer sorrounding the liquid on the upper side and a local equilibrium constraint at the liquid interface. The asymptotic behavior of the system is described, enabling the prediction of the direction of the net oxygen flux. It has been demostrated that the results obtained are valid for any type of homogeneus gas phase reactivity, provided that no oxide fog is formed in the gas. The model is useful to correctly guide thecnological processes such as single crystal growth: in the paper the application to the melt silicon/oxygen system is discussed. Finally, the present model can synthesize apparently contradictory experimental measurements of surface tension available in literature into a unique portraitFile | Dimensione | Formato | |
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