In this work we have investigated the performance of photodetectors at 1550nm based on Erbium/Silicon (Er/Si) Schottky junctions integrated with silicon-on-insulator (SOI) waveguides. Devices are based on the internal photoemission effect (IPE) which is a promising candidate as absorption mechanism for near infrared (NIR) photodetection in Si.
Near-infrared Erbium/Silicon Schottky photodetectors integrated with a silicon-on-insulator waveguide
T Crisci;M Gioffrè;G Coppola;M Medugno;M Iodice;M Casalino
2019
Abstract
In this work we have investigated the performance of photodetectors at 1550nm based on Erbium/Silicon (Er/Si) Schottky junctions integrated with silicon-on-insulator (SOI) waveguides. Devices are based on the internal photoemission effect (IPE) which is a promising candidate as absorption mechanism for near infrared (NIR) photodetection in Si.File in questo prodotto:
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