In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0× 1 MeV equivalent neutrons/cm). We present the comparison between simulation results and experimental data for p-type substrate structures in different operating conditions (temperature and biasing voltages) for fluences up to 2.2× neutrons/cm. The good agreement between simulation findings and experimental measurements fosters the application of this modeling scheme to the optimization of the next silicon detectors to be used at HL-LHC.
Modeling of radiation damage effects in silicon detectors at high fluences HL-LHC with Sentaurus TCAD
Moscatelli F;
2016
Abstract
In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0× 1 MeV equivalent neutrons/cm). We present the comparison between simulation results and experimental data for p-type substrate structures in different operating conditions (temperature and biasing voltages) for fluences up to 2.2× neutrons/cm. The good agreement between simulation findings and experimental measurements fosters the application of this modeling scheme to the optimization of the next silicon detectors to be used at HL-LHC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
