We present a study of the efficiency of LaAlO3/SrTiO3 nanoscale field effect devices realized in the side gate configuration. We show that a change in the resistance of more than four orders of magnitude and a voltage gain of up to 50 can be obtained with the application of a gate voltage smaller than 1V. At dilution temperatures, the nanodevices become superconducting and we demonstrate the possibility to obtain a superconductor to insulator transition by applying only 200 mV. These results are discussed in the view of applications for quantum electronics
High efficiency superconducting field effect devices for oxide electronic applications
Massarotti D;Tafuri F;Stornaiuolo D
2020
Abstract
We present a study of the efficiency of LaAlO3/SrTiO3 nanoscale field effect devices realized in the side gate configuration. We show that a change in the resistance of more than four orders of magnitude and a voltage gain of up to 50 can be obtained with the application of a gate voltage smaller than 1V. At dilution temperatures, the nanodevices become superconducting and we demonstrate the possibility to obtain a superconductor to insulator transition by applying only 200 mV. These results are discussed in the view of applications for quantum electronicsFile in questo prodotto:
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