In this paper a particular measurement configuration for characterizing dielectric materials by means of Time Domain Reflectometry (TDR) technique is proposed and studied. The holder of the dielectric samp1e is obtained from a shielded microstrip line by placing the dielectric material between the strip and the upper ground plane of the transmission system. Die1ectric samples of slab form are used and no parti3ular requirement exists for thickness and length. Theoretical calibration diagrams are obtained which re1ate the measured reflection coefficient to the dielectric permittivity at high and low frequencies.

Analysis of a particular microstrip structure for characterizing dielectric materials by means of TDR technique

1983

Abstract

In this paper a particular measurement configuration for characterizing dielectric materials by means of Time Domain Reflectometry (TDR) technique is proposed and studied. The holder of the dielectric samp1e is obtained from a shielded microstrip line by placing the dielectric material between the strip and the upper ground plane of the transmission system. Die1ectric samples of slab form are used and no parti3ular requirement exists for thickness and length. Theoretical calibration diagrams are obtained which re1ate the measured reflection coefficient to the dielectric permittivity at high and low frequencies.
1983
Istituto di Scienza e Tecnologie dell'Informazione "Alessandro Faedo" - ISTI
Microstrip structure
Dielectric materials
TDR technique
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/405830
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